Method of manufacturing a semiconductor integrated circuit device

ABSTRACT

Decreasing foreign materials adhering to a semiconductor substrate to improve a yield and decreasing handling errors for the semiconductor substrate to improve an operating ratio of the semiconductor manufacturing apparatus.  
     A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. These miconductor substrate is taken out of the container. An ionizer is used for static-eliminating the semiconductor substrates before and after process treatment in a transport area between the load port and a treatment section. The static-eliminated semiconductor substrate is accommodated in the container positioned to the load port. Thus, it is possible to decrease foreign materials adhering to the semiconductor substrate and errors in handling the semiconductor substrate.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a technique for manufacturing asemiconductor integrated circuit device. More specifically, the presentinvention relates to a technique effectively applied to a staticelimination technique of a semiconductor substrate and an accommodatingtechnique of a closed type.

[0002] For example, as methods of static-eliminating the substrate,techniques thereof are disclosed in Japanese Patent Laid-open No.8-8319, No. 7-14761 and No. 9-223673.

[0003] First, according to a technique disclosed in Japanese PatentLaid-open No. 8-8319, air is ionized by using an antistatic orstatic-elimination mechanism such as an ionized air generator, and theionized air is blown on a substrate, thereby antistatic orstatic-elimination of the substrate is carried out, so that trouble suchas miss transportation of substrates, or the like is prevented.

[0004] According to the technique disclosed in Japanese Patent Laid-openNo. 7-14761, under the state that non-reactive gas is filled in a casein which an electrically charged substrate is put, electric charges ofthe electrically charged substrate are neutralized by generating ionsand electrons in the case, and thereby complete annihilation ofelectromagnetic noise free, contamination free and residual potentialcan be achieved.

[0005] According to the technique disclosed in Japanese Patent Laid-openNo. 9-223673, a transport apparatus is described which is capable oftransporting a semiconductor substrate into a reactor that grows apredetermined semiconductor layer, without bringing out thesemiconductor substrate outside the system thereof. Ion of predeterminedgas is generated in predetermined atmosphere and thereby a semiconductorsubstrate in the transport apparatus is static-eliminated.

[0006] With respect to a clean room for performing manufacturingprocesses or the like of a semiconductor substrate, for example, theassociated technology is described in pp. 16-21 of “ElectronicMaterials, August Issue” published on Aug. 1, 2000 by Kogyo ChosakaiCo., Ltd. This issue reports a clean room structure includingmini-Environment (meaning small environment made of a sealed containerfor isolating products from contamination and human being) and anelimination of chemical contaminant, etc.

SUMMARY OF THE INVENTION

[0007] Since, in processes for manufacturing a semiconductor,particularly, in pre-processes thereof, semiconductor substrates aretransported between respective processes, varioussemiconductor-accommodating containers (called, for example, carriercassettes) have been used.

[0008] These semiconductor-accommodating containers are categorized intoa sealed type called FOUP (Front Opening Unified Pod) and an unsealedtype called OC (Open Cassette). Both types accommodate a plurality ofsemiconductor substrates stacked such that space intervenestherebetween.

[0009] The FOUP comprises a container body having an opening forcarrying in or out the semiconductor substrates, and a cover for closingthis opening. The container body is sealed by closing the cover.

[0010] In the future, the above-mentioned mini-Environment concept usingthe FOUP will be requested when each semiconductor substrate having adiameter of 300 mm is used. However, currently, a unsealed type OC hasbeen also used.

[0011] Incidentally, inventors have found that the above-mentionedstatic elimination technique has the following problems.

[0012] That is, on a production line using the OC, an ionizer used as astatic eliminator is installed above a load port in a semiconductormanufacturing apparatus. Accordingly, it is impossible tostatic-eliminate the semiconductor substrates after disposition thereof,by a semiconductor manufacturing apparatus, or an inspecting apparatus,or a transport robot handling section (hereafter referred to as a robothand) provided in a semiconductor manufacturing apparatus, or the like.

[0013] If each semiconductor substrate is charged by static or the like,the robot hand cannot grasp it because the charged semiconductorsubstrate is slippery. This causes a handling error, and thereby anerror occurs on the full-automatic line and the line is stopped.

[0014] Once the line stops, there occurs a problem of time-consumingmaintenance (recovery work) thereof and decrease in productiveefficiency.

[0015] And, if each semiconductor substrate is charged, a spark isgenerated and a leakage current is created due to discharge when therobot hand grasps the semiconductor substrate. As a result, there arisesa problem of occurrence of electric damage to the semiconductorsubstrate.

[0016] And, if a handling error of the robot hand causes a semiconductorsubstrate to move, there arises a problem of generation of particles.

[0017] Moreover, if the semiconductor substrate is charged, adhesion offoreign materials to the semiconductor substrate is increased andthereby there arises a problem of decrease of yield in the semiconductorsubstrate.

[0018] When the FOUP, which is a sealed semiconductor-accommodatingcontainer for the semiconductor substrates having a diameter of 300 mm,is used, the inventors found that the following problems are included ina SEMI (Semiconductor Equipment and Materials International) standard inwhich a specification about the FOUP is incorporated.

[0019] That is, as shown in a comparative example of FIG. 12, the SEMIstandards E47.1 and E62 provide that if a length L of asemiconductor-accommodating container 200 is (y33), y33=165.5 mm±0.5 mmand that if a step D between a connected surface 120 a of an opener 120and a surface 150 a of a surface plate 150 has a tolerance of (y34),y34=±0.25 mm.

[0020] Accordingly, a cover 220 of the semiconductor-accommodatingcontainer 200 may be retracted up to 1 mm from the front externalperiphery of a container body 210. The container length L of the entiresemiconductor-accommodating container 200 may be a minimum value of 165mm.

[0021] With respect to a distance for parallel moving thesemiconductor-accommodating container 200, the container length L isoften adjusted to be 165.5 mm for the container. In the case of thesemiconductor-accommodating container 200 which has a small containerlength L or in which the cover 220 is retracted, when the cover 220 isopened, the opener 120 can not close adhere to the cover 220 of thesemiconductor-accommodating container 200.

[0022] In this case, a rotary key 121 cannot be satisfactorily insertedinto the cover 220. Rotation of the rotary key 121 causes damage to aplate located in the side of an exposure surface 220 a of the cover 220,and can unsatisfactorily rotate a key groove 221 of side of the cover220. As a result, there arises such a problem that the cover 220 is notopened.

[0023] Further, when the cover 220 is closed, the rotary key 121 isrotated with the cover 220 incompletely fit into thesemiconductor-accommodating container 200, so that there arises such aproblem that the semiconductor-accommodating container 200 is closed.

[0024] An object of the present invention is to provide a method ofmanufacturing a semiconductor integrated circuit device for decreasingforeign materials that adhere to a semiconductor substrate and forimproving a yield.

[0025] Further, an object of the present invention is to provide amethod of manufacturing a semiconductor integrated circuit device fordecreasing handling errors and for increasing an operating ratio ofmanufacturing a semiconductor manufacturing apparatus.

[0026] Additionally, an object of the present invention is to provide amethod of manufacturing a semiconductor integrated circuit device foreliminating a damage to a semiconductor substrate, which is caused bydischarge, and for improving a yield.

[0027] Further, an object of the present invention is to provide amethod of manufacturing a semiconductor integrated circuit device foreliminating a damage to a semiconductor-accommodating container and forextending an useful period.

[0028] Further, an object of the present invention is to provide amethod of manufacturing a semiconductor integrated circuit device fordecreasing errors in opening or closing a semiconductor-accommodatingcontainer and for reducing inactive time on a semiconductormanufacturing apparatus and a productive line.

[0029] The above-mentioned and other objects and novel features of thepresent invention will be apparent from description of the presentspecification and accompanied drawings.

[0030] Of inventions disclosed in the present application,representative ones will be briefly described as follows.

[0031] Namely, the present invention is one that a sealed typesemiconductor-accommodating container accommodating a semiconductorsubstrate is set on a load port of a semiconductor manufacturingapparatus, and that the semiconductor substrate taken out of thissemiconductor-accommodating container is processed by a treatmentsection in a transport area between said load port and treatment area,and the semiconductor substrate processed by said treatment section isstatic-eliminated and is accommodated in saidsemiconductor-accommodating container positioned on the load port.

[0032] Further, the present invention comprises the steps of: linking aninternal space of a first sealed type semiconductor-accommodatingcontainer which accommodates and is filled with a plurality of wafersgrounded, to a local cleaning chamber of a first wafer treatmentapparatus with cleanliness kept; transporting at least of one of saidplurality of wafers accommodated in said firstsemiconductor-accommodating container under said linking state by meansof a transport mechanism provided in said local cleaning chamber, andthereby accommodating the at least one in a wafer treatment section ofsaid first wafer treatment apparatus; executing a first treatmentrelative to said wafer accommodated in said first wafer treatmentsection; transporting said processed wafer by said transport mechanismafter said step (c), and thereby accommodating said processed wafergrounded in said first semiconductor-accommodating container;static-eliminating said processed wafer after said step (c) and beforethe step (d), or during the step (d); and releasing the linking statebetween said first semiconductor-accommodating container and said localcleaning chamber after said step (d), and thereby returning said firstsemiconductor-accommodating container to a full state.

[0033] Further, the present invention is one that asemiconductor-accommodating container is located on a stage of asemiconductor-accommodating container opening/closing apparatus providedwith an opener having a connection surface projecting from the surfaceof a surface plate, and the connection surface of said opener is closelybrought into contact with an exposed surface of asemiconductor-accommodating container of said cover, and said cover isheld by said opener, and said cover is opened or closed, and therebysaid semiconductor substrate is carried in or out.

[0034] Further, the present invention comprises the steps of: locating asemiconductor-accommodating container on a stage of asemiconductor-accommodating container opening/closing apparatus, whereinsaid semiconductor-accommodating container opening/closing apparatuscomprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects over 0.25 mm from a surfaceof said surface plate; closely bringing the connection surface of saidopener into contact with an exposed surface of said cover, and holdingsaid cover by said opener, vertically moving said cover relative to anopening surface of said semiconductor-accommodating container by saidopener, and opening said cover, and connecting an opening portion ofsaid semiconductor-accommodating container and an opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus to each other; and carrying said semiconductorsubstrate into or from semiconductor-accommodating container, through anopening portion of said semiconductor-accommodating container and anopening portion of said semiconductor-accommodating containeropening/closing apparatus, between said semiconductor-accommodatingcontainer and a semiconductor manufacturing apparatus in which saidsemiconductor-accommodating container opening/closing apparatus islocated.

[0035] Other aspects included in the present invention will be describedby stating items.

[0036] 1. A method of manufacturing a semiconductor integrated circuitdevice, comprises the steps of:

[0037] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects over 0.25 mm from a surfaceof said surface plate; closely bringing the connection surface of saidopener into contact with an exposed surface of said cover, and holdingsaid cover by said opener;

[0038] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and opening said coverby said opener, and taking out said semiconductor substrate, andtransporting said semiconductor substrate into a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer opening/closing apparatus is located;

[0039] (c) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocessing said semiconductor substrate in said treatment section;

[0040] (d) moving the semiconductor substrate processed at said step(c), to the transport area in the semiconductor manufacturing apparatus,and static-eliminating said semiconductor substrate in said transportarea; and

[0041] (e) moving and accommodating said semiconductor substratestatic-eliminated at said step (d) to and in thesemiconductor-accommodating container.

[0042] 2. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0043] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects 0.25 to 10 mm from a surfaceof said surface plate; closely bringing the connection surface of saidopener into contact with an exposed surface of said cover, and holdingsaid cover by said opener;

[0044] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and opening said coverby said opener, and taking out said semiconductor substrate, andtransporting said semiconductor substrate into a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer opening/closing apparatus is located;

[0045] (c) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocessing said semiconductor substrate in said treatment section;

[0046] (d) moving the semiconductor substrate processed at said step(c), to the transport area in the semiconductor manufacturing apparatus,and static-eliminating said semiconductor substrate in said transportarea; and

[0047] (e) moving and accommodating said semiconductor substratestatic-eliminated at said step (d) to and in thesemiconductor-accommodating container.

[0048] 3. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0049] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects 1 mm from a surface of saidsurface plate; closely bringing the connection surface of said openerinto contact with an exposed surface of said cover, and holding saidcover by said opener;

[0050] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and opening said coverby said opener, and taking out said semiconductor substrate, andtransporting said semiconductor substrate into a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer opening/closing apparatus is located;

[0051] (c) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocessing said semiconductor substrate in said treatment section;

[0052] (d) moving the semiconductor substrate processed at said step(c), to the transport area in the semiconductor manufacturing apparatus,and static-eliminating said semiconductor substrate in said transportarea; and

[0053] (e) moving and accommodating said semiconductor substratestatic-eliminated at said step (d) to and in thesemiconductor-accommodating container.

[0054] 4. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0055] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects over 0.25 to 10 mm from asurface of said surface plate; closely bringing the connection surfaceof said opener into contact with an exposed surface of said cover, andholding said cover by said opener;

[0056] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and opening said coverby said opener, and taking out said semiconductor substrate, andtransporting said semiconductor substrate into a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer opening/closing apparatus is located;

[0057] (c) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and processingsaid semiconductor substrate in said treatment section;

[0058] (d) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocessing said semiconductor substrate in said treatment section;

[0059] (e) moving said semiconductor substrate processed at said step(d) to the transport area in said semiconductor manufacturing apparatus,and static-eliminating said semiconductor substrate in said transportarea; and

[0060] (f) moving and accommodating said semiconductor substratestatic-eliminated at said step (e) to and in saidsemiconductor-accommodating container.

[0061] Further other aspects included in-the present invention will bedescribed by stating items.

[0062] 1. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0063] (a) locating a sealed type semiconductor-accommodating containeraccommodating a semiconductor substrate, on a stage of asemiconductor-accommodating container opening/closing apparatus;

[0064] (b) opening cover of said semiconductor-accommodating containerby an opener of said semiconductor-accommodating containeropening/closing apparatus, and taking out said semiconductor substrate,and transporting said semiconductor substrate into a semiconductormanufacturing apparatus in which the semiconductor-accommodatingcontainer opening/closing apparatus is set;

[0065] (c) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocessing said semiconductor substrate in said treatment section;

[0066] (d) moving said semiconductor substrate processed at said step(c) into the transport area of said semiconductor manufacturingapparatus, and static-eliminating said semiconductor substrate in saidtransport area; and

[0067] (e) moving and accommodating the semiconductor substratestatic-eliminated at said step (d) to and in saidsemiconductor-accommodating container.

[0068] 2. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0069] (a) locating, on a stage of a semiconductor-accommodatingcontainer, a sealed type semiconductor-accommodating container whichaccommodates a semiconductor substrate and in which a contact portionbeing in contact with at least said semiconductor substrate is formed byconductive materials;

[0070] (b) opening cover of said semiconductor-accommodating containerby an opener of said semiconductor-accommodating containeropening/closing apparatus, and taking out said semiconductor substrate,and transporting said semiconductor substrate into a semiconductormanufacturing apparatus in which the semiconductor-accommodatingcontainer opening/closing apparatus is set;

[0071] (c) moving said semiconductor substrate to a transport area insaid semiconductor manufacturing apparatus, and static-eliminating saidsemiconductor substrate in said transport area;

[0072] (d) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocessing said semiconductor substrate in said treatment section;

[0073] (e) moving said semiconductor substrate processed at said step(d) into said transport area of said semiconductor manufacturingapparatus, and static-eliminating said semiconductor substrate in saidtransport area; and

[0074] (f) moving and accommodating the semiconductor substratestatic-eliminated at said step (e) to and in saidsemiconductor-accommodating container.

[0075] 3. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0076] (a) locating, on a stage of a semiconductor-accommodatingcontainer, a sealed type semiconductor-accommodating container whichaccommodates a semiconductor substrate and in which a contact portionbeing in contact with at least said semiconductor substrate is formed byconductive materials;

[0077] (b) opening cover of said semiconductor-accommodating containerby an opener of said semiconductor-accommodating containeropening/closing apparatus, and taking out said semiconductor substrate,and transporting said semiconductor substrate into a semiconductormanufacturing apparatus in which the semiconductor-accommodatingcontainer opening/closing apparatus is set;

[0078] (c) static-eliminating, in said transport area, a robot handwhich is located in said transport area and is ungrounded, andtransporting said semiconductor substrate in the treatment section ofsaid semiconductor manufacturing apparatus by this ungrounded robothand;

[0079] (d) processing said semiconductor substrate in said treatmentsection;

[0080] (e) moving said semiconductor substrate processed at said step(d) to said transport area in said semiconductor manufacturingapparatus, and static-eliminating said semiconductor substrate in saidtransport area; and

[0081] (f) moving and accommodating said semiconductor substratestatic-eliminated at said step (e) to and in saidsemiconductor-accommodating container.

[0082] 4. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0083] (a) locating, on a stage of a semiconductor-accommodatingcontainer, a sealed type semiconductor-accommodating container whichaccommodates a semiconductor substrate and in which a contact portionbeing in contact with at least said semiconductor substrate is formed byconductive materials;

[0084] (b) opening cover of said semiconductor-accommodating containerby an opener of said semiconductor-accommodating containeropening/closing apparatus, and taking out said semiconductor substrate,and transporting said semiconductor substrate into a semiconductormanufacturing apparatus in which the semiconductor-accommodatingcontainer opening/closing apparatus is set;

[0085] (c) moving said semiconductor substrate to a transport area insaid semiconductor manufacturing apparatus, and thereafter processingsaid semiconductor substrate in said treatment section;

[0086] (d) moving the semiconductor substrate processed at said step (c)to a load lock chamber in said semiconductor manufacturing apparatus,and supporting said semiconductor substrate by means of an substratesupporting stand ungrounded in this load lock chamber;

[0087] (e) moving said semiconductor substrate from said load lockchamber to a transport area of said semiconductor manufacturingapparatus, and static-eliminating said semiconductor substrate in saidtransport area; and

[0088] (f) moving and accommodating said semiconductor substratestatic-eliminated at said step (e) to and in saidsemiconductor-accommodating container.

[0089] 5. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0090] (a) locating a semiconductor-accommodating containeraccommodating a semiconductor substrate on a load port of asemiconductor manufacturing apparatus;

[0091] (b) taking out said semiconductor substrate from saidsemiconductor-accommodating container, and transporting saidsemiconductor substrate to a treatment section of said semiconductormanufacturing apparatus;

[0092] (c) process-treating said semiconductor substrate in saidtreatment section;

[0093] (d) moving the semiconductor substrate processed at said step (c)to a transport area between said treatment section and said load port insaid semiconductor manufacturing apparatus, and static-eliminating saidsemiconductor substrate in said transport area; and

[0094] (e) accommodating the semiconductor substrate static-eliminatedat said step (d), in said semiconductor-accommodating container locatedon said load port of said semiconductor manufacturing apparatus.

[0095] 6. A method of manufacturing a semiconductor integrated circuitdevice, comprises the steps of:

[0096] (a) locating, on a load port of a semiconductor manufacturingapparatus, a semiconductor-accommodating container which accommodates asemiconductor substrate and in which a contact portion being in contactwith at least said semiconductor substrate is formed by conductivematerials and which is grounded;

[0097] (b) taking said semiconductor substrate from saidsemiconductor-accommodating container and moving said semiconductorsubstrate to a transport area of said semiconductor manufacturingapparatus having a treatment section and said transport area;

[0098] (c) static-eliminating said semiconductor substrate in saidtransport area by an ionizer;

[0099] (d) moving said semiconductor substrate to said treatment sectionand process-treating said semiconductor substrate in said treatmentsection;

[0100] (e) moving the semiconductor substrate processed at said step (d)to said transport area and static-eliminating said semiconductorsubstrate in said transport area by said ionizer; and

[0101] (f) accommodating the semiconductor substrate static-eliminatedat said step (e), in said semiconductor-accommodating container locatedon said load port.

[0102] 7. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0103] (a) locating, on a load port of a semiconductor manufacturingapparatus, a semiconductor-accommodating container which accommodates asemiconductor substrate and in which a contact portion being in contactwith at least said semiconductor substrate is formed by conductivematerials and which is grounded;

[0104] (b) taking said semiconductor substrate from saidsemiconductor-accommodating container and moving said semiconductorsubstrate to a transport area of said semiconductor manufacturingapparatus having a treatment section and said transport area;

[0105] (c) supporting said semiconductor substrate by a robot handstatic-eliminated in said transport area, and static-eliminating saidsemiconductor substrate in said transport area;

[0106] (d) moving said semiconductor substrate to said treatment sectionby said robot hand, and processing said semiconductor substrate in saidtreatment section;

[0107] (e) moving, to said transport area, said semiconductor substrateprocessed at said step (d), and supporting said semiconductor substrateby said robot hand in said transport area, and static-eliminating saidthe semiconductor substrate; and

[0108] (f) accommodating said semiconductor substrate static-eliminatedat said step (e), in said semiconductor-accommodating container locatedon said load port.

[0109] 8. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0110] (a) locating, on a load port of a semiconductor manufacturingapparatus, a semiconductor-accommodating container which accommodates asemiconductor substrate and in which a contact portion being in contactwith at least said semiconductor substrate is formed by conductivematerials;

[0111] (b) opening a cover of said semiconductor-accommodating containerby an opener of a semiconductor-accommodating container opening/closingapparatus provided in said semiconductor manufacturing apparatus, andtaking out said semiconductor substrate, and transporting saidsemiconductor substrate into said semiconductor manufacturing apparatus;

[0112] (c) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocess-treating said semiconductor substrate in said treatment section;

[0113] (d) moving said semiconductor substrate processed at said step(c) to a transport area in said semiconductor manufacturing apparatusbetween said treatment section and said load port, andstatic-eliminating said semiconductor substrate in said transport area;and

[0114] (e) moving and accommodating said semiconductor substratestatic-eliminated at said step (d) to and in saidsemiconductor-accommodating container.

[0115] 9. A method of manufacturing a semiconductor integrated circuitdevice according to item 8, wherein cleanliness of said transport areais higher than that of a periphery of said load port.

[0116] 10. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0117] (a) locating, on a stage of a semiconductor-accommodatingcontainer opening/closing apparatus, a semiconductor-accommodatingcontainer which accommodates a semiconductor substrate and whose theentire is formed of conductive materials;

[0118] (b) opening a cover of said semiconductor-accommodating containerby a opener of said semiconductor-accommodating containeropening/closing apparatus, and taking out semiconductor substrate, andtransporting said semiconductor substrate into semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer opening/closing apparatus is provided;

[0119] (c) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocess-treating said semiconductor substrate in said treatment section;

[0120] (d) moving said semiconductor substrate processed at said step(c), to a transport area in said semiconductor manufacturing apparatus,and static-eliminating said semiconductor substrate in said transportarea; and

[0121] (e) moving and accommodating said semiconductor substratestatic-eliminated at said step (d) to and in saidsemiconductor-accommodating container.

[0122] 11. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0123] (a) locating, on a stage of a semiconductor-accommodatingcontainer opening/closing apparatus, a semiconductor-accommodatingcontainer which accommodates a semiconductor substrate and whose theentire is formed of conductive materials;

[0124] (b) opening a cover of said semiconductor-accommodating containerby a opener of said semiconductor-accommodating containeropening/closing apparatus, and taking out semiconductor substrate, andtransporting said semiconductor substrate into semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer opening/closing apparatus is provided;

[0125] (c) moving said semiconductor substrate to a transport area insaid semiconductor manufacturing apparatus and static-eliminating saidsemiconductor substrate in said transport area;

[0126] (d) transporting said semiconductor substrate to a treatmentsection of said semiconductor manufacturing apparatus, and thereafterprocess-treating said semiconductor substrate in said treatment section;

[0127] (e) moving the semiconductor substrate processed at said step(d), to a transport area in said semiconductor manufacturing apparatus,and static-eliminating said semiconductor substrate in said transportarea; and

[0128] (f) moving and accommodating said semiconductor substratestatic-eliminated at said step (e) to and in saidsemiconductor-accommodating container.

[0129] 12. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0130] (a) locating, on a stage of a semiconductor-accommodatingcontainer, a semiconductor-accommodating container which accommodates asemiconductor substrate and in which a contact portion being in contactwith at least said semiconductor substrate is formed by conductivematerials;

[0131] (b) opening cover of said semiconductor-accommodating containerby an opener of said semiconductor-accommodating containeropening/closing apparatus, and taking out said semiconductor substrate,and transporting said semiconductor substrate into a semiconductormanufacturing apparatus in which the semiconductor-accommodatingcontainer opening/closing apparatus is set;

[0132] (c) moving said semiconductor substrate to a transport area insaid semiconductor manufacturing apparatus, and thereafterprocess-treating said semiconductor substrate in said treatment section;

[0133] (d) moving the semiconductor substrate processed at said step(c), to a transport area in said semiconductor manufacturing apparatus,and static-eliminating said semiconductor substrate in said transportarea, and preventing said semiconductor substrate from beingcontaminated in chemical, by a chemical filter provided in saidtransport area; and

[0134] (e) moving and accommodating said semiconductor substratestatic-eliminated at said step (d) to and in saidsemiconductor-accommodating container.

[0135] 13. A method of manufacturing a semiconductor integrated circuitdevice according to item 12, further comprises a step of preventing saidsemiconductor substrate from being contaminated in chemical, by saidchemical filter in said transport area, before and after process of saidsemiconductor substrate in said treatment section.

[0136] 14. A method of manufacturing a semiconductor integrated circuitdevice according to item 1, further comprises a step ofsingle-wafer-processing said semiconductor substrate in said treatmentsection of said semiconductor manufacturing apparatus.

[0137] 15. A method of manufacturing a semiconductor integrated circuitdevice according to item 14, wherein, during a single wafer process ofsaid semiconductor substrate in said treatment section of saidsemiconductor manufacturing apparatus, a semiconductor substrate to benext-processed waits in a load lock chamber of said semiconductormanufacturing apparatus.

[0138] 16. A method of manufacturing a semiconductor integrated circuitdevice according to item 1, further comprises a step of movingvertically said cover relative to an opening surface of saidsemiconductor-accommodating container by said opener of saidsemiconductor-accommodating container opening/closing apparatus, andopening said cover, and carrying in or out said semiconductor substratewhile said semiconductor substrate is carried in or out into saidsemiconductor-accommodating container.

[0139] 17. A method of manufacturing a semiconductor integrated circuitdevice according to item 1, wherein a substrate having a diameter of 300mm is used as said semiconductor substrate.

[0140] 18. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0141] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects over 0.25 mm from a surfaceof said surface plate; closely bringing the connection surface of saidopener into contact with an exposed surface of said cover, and holdingsaid cover by said opener;

[0142] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and holding said coverby said opener;

[0143] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0144] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided.

[0145] 19. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0146] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects over 0.3 mm from a surface ofsaid surface plate; closely bringing the connection surface of saidopener into contact with an exposed surface of said cover, and holdingsaid cover by said opener;

[0147] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and holding said coverby said opener;

[0148] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0149] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided.

[0150] 20. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0151] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects over 0.7 mm from a surface ofsaid surface plate; closely bringing the connection surface of saidopener into contact with an exposed surface of said cover, and holdingsaid cover by said opener;

[0152] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and holding said coverby said opener;

[0153] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0154] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided.

[0155] 21. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0156] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects at 1.0 mm from a surface ofsaid surface plate; closely bringing the connection surface of saidopener into contact with an exposed surface of said cover, and holdingsaid cover by said opener;

[0157] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and holding said coverby said opener;

[0158] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0159] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided.

[0160] 22. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0161] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that an overlapamount between a distance between a surface of said surface plate andthe connection surface of said opener, and a distance between a facialreference surface and an exposed surface of said cover of saidsemiconductor-accommodating container is set to be more than zero;

[0162] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and holding said coverby said opener;

[0163] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0164] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided, wherein

[0165] said overlap amount of each of all semiconductor-accommodatingcontainers moving on a semiconductor manufacturing line is more thanzero.

[0166] 23. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0167] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that an overlapamount between a distance between a surface of said surface plate andthe connection surface of said opener, and a distance between a facialreference surface and an exposed surface of said cover of saidsemiconductor-accommodating container is set to be more than zero and1.25 mm or less;

[0168] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and holding said coverby said opener;

[0169] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0170] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided, wherein

[0171] said overlap amount of each of all semiconductor-accommodatingcontainers moving on a semiconductor manufacturing line is more thanzero and 1.25 mm or less.

[0172] 24. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0173] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed;

[0174] (b) holding said cover-by said opener;

[0175] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0176] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided, wherein

[0177] a rate of no close contact portion between the connection surfaceof said opener and the exposed surface of said cover is 1% or less outof all semiconductor-accommodating containers moving on a semiconductormanufacturing line when said opener holds said cover in said step (b).

[0178] 25. A method of manufacturing a semiconductor integrated circuitdevice comprises the steps of:

[0179] (a) locating a semiconductor-accommodating container on a stageof a semiconductor-accommodating container opening/closing apparatus,wherein said semiconductor-accommodating container opening/closingapparatus comprises said stage capable of locating saidsemiconductor-accommodating container accommodating a semiconductorsubstrate, an opener for opening or closing a cover of saidsemiconductor-accommodating container, and a surface plate in which anopening portion for locating said opener is formed, such that aconnection surface of said opener projects from a surface of saidsurface plate; closely bringing the connection surface of said openerinto contact with an exposed surface of said cover, and holding saidcover by said opener;

[0180] (b) closely bringing the connection surface of said opener intocontact with the exposed surface of said cover, and holding said coverby said opener, with said opener retreated by said cover;

[0181] (c) moving vertically said cover relative an opening surface ofsaid semiconductor-accommodating container by said opener, and openingsaid cover, and connecting an opening portion and the opening portion ofsaid surface plate of said semiconductor-accommodating containeropening/closing apparatus; and

[0182] (d) carrying in or out said semiconductor substrate to or fromsaid semiconductor-accommodating container via the opening of saidsemiconductor-accommodating container and the opening of saidsemiconductor-accommodating container opening/closing apparatus betweensaid semiconductor-accommodating container and a semiconductormanufacturing apparatus in which said semiconductor-accommodatingcontainer is provided.

[0183] 26. A method of manufacturing a semiconductor integrated circuitdevice according to item 18, further comprises a step of closelybringing the connection surface of said opener into contact with theexposed surface of said cover, and retreating said cover by said openerwhen said opener holds said cover of said semiconductor-accommodatingcontainer.

[0184] 27. A method of manufacturing a semiconductor integrated circuitdevice according to item 18, further comprises a step ofsingle-wafer-processing said semiconductor substrate in a treatmentsection of said semiconductor manufacturing apparatus.

[0185] 28. A method of manufacturing a semiconductor integrated circuitdevice according to item 27, wherein, during a single wafer process ofsaid semiconductor substrate in said treatment section of saidsemiconductor manufacturing apparatus, a semiconductor substrate to benext-processed waits in a load lock chamber of said semiconductormanufacturing apparatus.

[0186] 29. A method of manufacturing a semiconductor integrated circuitdevice according to item 18, wherein a substrate having a diameter of300 mm is used as said semiconductor substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

[0187]FIGS. 1A and B are external perspective views showing a structuralexample of a semiconductor-accommodating container opening/closingapparatus used for the method of manufacturing a semiconductorintegrated circuit device according to embodiment 1 of the presentinvention, wherein FIG. 1A shows a front structure and FIG. 1Billustrates a rear structure.

[0188]FIG. 2 is a perspective view showing a structural example of asemiconductor-accommodating container (FOUP) used for the method ofmanufacturing a semiconductor integrated circuit device according toembodiment 1 of the present invention.

[0189]FIG. 3 is a partial perspective view showing a structural exampleof a semiconductor manufacturing apparatus equipped with thesemiconductor-accommodating container opening/closing apparatus as shownin FIG. 1.

[0190]FIG. 4 is a side view showing an internal structure of thesemiconductor manufacturing apparatus as shown in FIG. 3.

[0191]FIG. 5 is a plan view showing an internal structure of thesemiconductor manufacturing apparatus as shown in FIG. 3.

[0192]FIG. 6 is a flowchart exemplifying a transport sequence forsemiconductor substrates in the method of manufacturing a semiconductorintegrated circuit device according to embodiment 1 of the presentinvention.

[0193]FIG. 7 is a side view showing an internal structure of asemiconductor manufacturing apparatus as a modification to thesemiconductor manufacturing apparatus as shown in FIG. 4.

[0194]FIG. 8 is a partial side view showing an elevator operation of thesemiconductor-accommodating container opening/closing apparatus usingthe semiconductor-accommodating container as a modification to thesemiconductor-accommodating container shown in FIG. 2.

[0195]FIG. 9 is a partial plan view showing an example of a step betweenan opener's connection surface and a surface plate's surface used forthe method of manufacturing a semiconductor integrated circuit deviceaccording to embodiment 2 of the present invention.

[0196]FIG. 10 is a partial plan view showing an example of an overlapamount between an opener's connection surface and asemiconductor-accommodating container's exposed surface in thesemiconductor-accommodating container opening/closing apparatusaccording to embodiment 2 of the present invention.

[0197]FIG. 11 is a partial side view showing an example of holding theopener of the semiconductor manufacturing apparatus in FIG. 10.

[0198]FIG. 12 is a partial plan view showing relationship between thesemiconductor-accommodating container opening/closing apparatus and thesemiconductor-accommodating container in the comparative example forembodiment 2.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0199] 1. A semiconductor substrate or a semiconductor wafer means asilicon single-crystal substrate, an SOI (Silicon On Insulator)substrate (generally disk-shaped), a sapphire substrate, a glasssubstrate, other insulating or semi-insulating or semiconductorsubstrates or the like, or a composite substrate thereof. Asemiconductor integrated circuit device described in the presentapplication also means a semiconductor such as a silicon wafer, asapphire substrate or the like; something formed on an insulatingsubstrate; or something formed on other insulating substrates made fromglasses or the like such as TFT (Thin Film Transistor) and STN (SuperTwisted Nematic) liquid crystals and the like, particularly except forthe cases specified.

[0200] 2. Semiconductor-accommodating container: This means a containerfor accommodating a plurality of semiconductor substrates. In this, aFOUP means a sealed type container comprising a cover and a containerbody.

[0201] 3. Facial reference surface: This means to divide thesemiconductor substrate into two parts and means a vertical surfaceparallel to a front side (which the semiconductor substrate is removedfrom or inserted into) of the semiconductor-accommodating container.

[0202] 4. Semiconductor-accommodating container opening/closingapparatus: This means an apparatus for opening and closing a cover of awafer-accommodating container such as FOUP, and, for example, comprisesa metal plate or the like called an opener.

[0203] 5. Treatment section: For example, a wafer treatment sectionmeans an apparatus portion for accommodating wafers therein andperforming predetermined treatment similarly to a plasma reactionchamber in a dry etching apparatus, and generally does not include atransport section or a wait section for only carrying the wafersthereto.

[0204] 6. Transport area: This means a section of mainly carrying in orout wafers between a semiconductor-accommodating container such as FOUPand the wafer treatment section, and, for example, means a region or thelike between a load port and the wafer treatment section. Accordingly,in the case where there is provided an auxiliary treatment section forprealignment, etc., such the section is generally included in thetransport area, too.

[0205] 7. Ionizer: This means an apparatus for generating positive andnegative ions by ionizing ambient atmosphere gas. In semiconductorindustries, the ionizer is often used for static-eliminating wafersgenerally by neutralizing predetermined portions. Concretely, theionizer means an apparatus for generating a corona discharge by applyinghigh voltage to a needle-shaped or narrow line-shaped electrode, and forionizing positively or negatively ambient air, and for neutralizingelectric charges on the surface of an electrically charged object byusing a reversed-polarity ion.

[0206] 8. Fan filter unit: This means an air cleaner integrating a smallair blower into a ULPA (Ultra Low Penetration Air) filter. The ULPAfilter is air filter having a particle collecting ratio of 99.9995% ormore relative to a particle having a diameter of 0.15 μm at a rated airflow.

[0207] 9. Chemical filter: This means a filter having a purpose ofremoving gaseous pollutant in air.

[0208] Embodiments of the present invention will be described in detailwith reference to the drawings.

[0209] If advantageously necessary, the following embodiments aredescribed by dividing into a plurality of sections or sub-embodiments.However, except for particularly specified cases, these divided sectionsor sub-embodiments do not have anything to do with each other but one ofthese has something to do with one portion or the entire of the othersin modifications, or detailed or supplemented explanation, or the like.

[0210] Except for the cases where the number or the like of elements(including the number of article, numeric values, amounts, ranges or thelike), and for the case specified particularly, and for the case ofprincipled and obvious restriction of the specific number, and the like,the following embodiments are limited to the specific number and mayinclude the number more or less than or equal to the specific number.

[0211] Furthermore, in the following embodiments, needless to say,components thereof (including elemental steps or the like) are notalways essential thereto, except for the cases specified particularly,and for the case thought of as in principle and obviously essential, andthe like.

[0212] Likewise, in the following embodiments, reference to shapes,positional relationship or the like of the components or the likeincludes ones substantially similar or closely akin to the shapes or thelike, except for the cases specified particularly, for the case thoughtof as in principle and obviously essential, andthe like. This alsoapplies to the above-mentioned numeric values and ranges.

[0213] Though all the Figures for explaining the embodiments, membershaving the same functions are denoted by the same reference numerals andrepetitive description thereof will be omitted.

[0214] (Embodiment 1)

[0215]FIGS. 1A and 1B are external perspective views showing astructural example of a semiconductor-accommodating containeropening/closing apparatus used for a method of manufacturing asemiconductor integrated circuit device that is embodiment 1 of thepresent invention. FIG. 1A shows a front side of the structure. FIG. 1Bshows a rear side of the structure. FIG. 2 is a perspective view showinga structural example of a semiconductor-accommodating container (FOUP)used for the method of manufacturing a semiconductor integrated circuitdevice that is embodiment 1 of the present invention. FIG. 3 is apartial perspective view showing a structural example of a semiconductormanufacturing apparatus in which the semiconductor-accommodatingcontainer opening/closing apparatus shown in FIG. 1 is installed. FIG. 4is a side view showing an internal structure of the semiconductormanufacturing apparatus shown in FIG. 3. FIG. 5 is a plan view showingan internal structure of the semiconductor manufacturing apparatus shownin FIG. 3. FIG. 6 is a sequential flowchart showing an example of atransport sequence for semiconductor substrates in the method ofmanufacturing a semiconductor integrated circuit device that isembodiment 1 of the present invention. FIG. 7 is a side view showing aninternal structure of a modification of the semiconductor manufacturingapparatus shown in FIG. 4. FIG. 8 is a partial side view showing anoperation of an elevator in the semiconductor-accommodating containeropening/closing apparatus using a modification of thesemiconductor-accommodating container shown in FIG. 2.

[0216] In the method of manufacturing a semiconductor integrated circuitdevice that is the present embodiment 1, a semiconductor-accommodatingcontainer 200 (hereafter referred to as a container 200) of a sealedtype is used, and a semiconductor substrate (a semiconductor wafer) 300accommodated therein is taken out and transported into a semiconductormanufacturing apparatus 400, and desired process treatment (for example,treatment performed in pre-treatment such as exposure, etching,sputtering, film-formation, or the like) is performed by thissemiconductor manufacturing apparatus 400, and thereafter thesemiconductor substrate 300 finishing the treatment thereof isaccommodated in the container 200 again.

[0217] The semiconductor substrate 300 composed of a large-sized memberhaving a diameter of 300 mm. Here, as the container 200 foraccommodating this, a front-opening/closing type FOUP will be described.

[0218] With reference to FIGS. 1A and 1B and 2 to 5, a structure of thesemiconductor manufacturing apparatus 400 is described, whichcorresponds to a mini-Environment (meaning small environment made of asealed container for isolating products from contamination and humanbeing) used by the method of the manufacturing the semiconductorintegrated circuit device that is the present embodiment 1.

[0219] As shown in FIGS. 3, 4, and 5, the semiconductor manufacturingapparatus 400 mainly comprises a semiconductor-accommodating containeropening/closing apparatus 100 (hereafter referred to as anopening/closing apparatus 100), a treatment section 420 for performingdesired processes on the semiconductor substrate 300, and a transportarea 410 for carrying out the semiconductor substrate 300 between a loadport 100 a of the semiconductor manufacturing apparatus 400 and thetreatment section 420.

[0220] Further, as shown in FIGS. 1A, 1B and 2, the opening/closingapparatus 100 comprises, if roughly divided, a stage 110 for mountingthe container 200 and an opener 120 for holding and opening/closing acover 220 of the container 200. As shown in FIG. 1A, the stage 110 isprovided with positioning pins 112 for accurately mounting the container200 and a slider 111 for making the container 200 close to the opener120.

[0221] According to this embodiment 1, the slider 111 is movable in afront-and-rear direction by means of a motor and a ball screw (notshown) provided in the stage 110. The opener 120 is provided with rotarykeys 121 which can be rotated through 90° by a motor (not shown)provided inside the opener 120.

[0222] As shown in FIG. 1B, the rear side of the opener 120 is providedwith an opener opening/closing mechanism 130 and an openerrising/falling mechanism 131. The opener opening/closing mechanism 130opens and closes the cover 220 of the container by going forward andbackward the opener 120 in a horizontal direction. The openerrising/falling mechanism 131 makes the opener 120 rise and fall. Theopener opening/closing mechanism 130 and the opener rising/fallingmechanism 131 are both operated by a motor and a ball screw (not shown).The entire driving sections of the opener opening/closing mechanism 130and the opener rising/falling mechanism 131 are provided with a safetycover 140 such that operators do not easily come in contact therewith.

[0223] As shown in FIG. 4, the semiconductor manufacturing apparatus 400is divided into a transport area 410 and a treatment section 420therein. FIG. 3 shows an example of the case where a structure that fouropening/closing apparatuses 100 are installed to the semiconductormanufacturing apparatus 400.

[0224] The transport area 410 is provided with a fan filter unit 412 onan inner ceiling thereof, and clean air flows from the top thereof tothe bottom in a down-flow manner. During operation of the fan filterunit 412, the transport area 410 is kept at cleanliness ISO1 to ISO2,and thereby can maintain a highly clean state in comparison tocleanliness ISO6 outside the semiconductor manufacturing apparatus 400.

[0225] If the semiconductor substrate 300 is left putting in theenvironment of cleanliness ISO6, foreign materials adhere to thesubstrate surface as time goes, and thereby a yield of semiconductorparts (semiconductor integrated circuits) formed on the semiconductorsubstrate 300 is remarkably decreased. The inside of the container 200is shut out from the outside world. If the semiconductor substrate 300is carried in or out in the highly clean environment, the cleanliness inthe container is maintained. So, even if the container 200 is leftputting in the environment of cleanliness ISO6, a very small amount offoreign materials adheres to the semiconductor substrate 300 inside thecontainer 200 unless the cover 220 of the container 200 is opened andclosed.

[0226]FIGS. 4 and 5 schematically show an internal structure of thesemiconductor manufacturing apparatus 400 that is the presentembodiment 1. The transport area 410 is provided with the fan filterunit 412 on the internal ceiling, a transport robot 411, and analignment section 415 shown in FIG. 5. The transport robot 411 transfersthe semiconductor substrates 300 between the container 200 on the loadport 100 a and a load lock chamber 421 in the treatment section 420. Thealignment section 415 adjusts the position (direction) of thesemiconductor substrate 300 when the semiconductor substrate 300 istransferred to the load lock chamber 421.

[0227] Further, an ionizer 413 as a static eliminator is provided at thebottom of the fan filter unit 412 in the transport area 410. The ionizer413 static-eliminates the semiconductor substrate 300 which is intransportation or wait in the transport area 410, and static-eliminatesthe semiconductor substrate 300 in the container 200 put in the loadport 100 a.

[0228] That is, the semiconductor substrate 300 is static-eliminatedwhen being carried in the load lock chamber 421 of the treatment section420, or when being returned to the container 200 after processes areperformed in the treatment section 420, or during waiting in the loadlock chamber 421, an unload lock chamber 422 or the alignment section415, or when is accommodated in the container 200 on the load port 100a. The ionizer applies ionized gas to the semiconductor substrate 300and properly maintains electric potential of the semiconductor substrate300.

[0229] This can static-eliminate the semiconductor substrate 300 whichis before-process and after-process in transportation within thetransport area 410, or which is in waiting at the load lock chamber 421,the unload lock chamber 422 and the alignment section 415, or which isaccommodated in the container 200, and can properly keep potential ofthe semiconductor substrate 300.

[0230] The treatment section 420 is provided with a treatment chamber423 for performing process at the semiconductor substrate 300. Betweenthe treatment chamber 423 and the transport area 410, there are providedthe load lock chamber 421 and the unload lock chamber 422 which can besealed by gate valves 421 a and 422 a.

[0231] The load lock chamber 421 is provided with substrate supportingstands 421 b in FIG. 4, by which the semiconductor substrate 300 is madeto wait and can be supported. The unload lock chamber 422 is alsoprovided with not shown members similar to the substrate supportingstands 421 b.

[0232] Nonconductive resin coating is applied to such contact portionsthat a robot hand 411 a of the transport robot 411 installed in thetransport area 410 is in contact with the semiconductor substrate 300.Nonconductive resin coating is also applied to such contact portionsthat the substrate supporting stands 421 b are in contact with thesemiconductor substrate 300.

[0233] Therefore, while the robot hand 411 a or each substratesupporting stand 421 b is supporting the semiconductor substrate 300,its potential does not become 0 V.

[0234] Consequently, it is very effective to static-eliminate thesemiconductor substrate 300 by providing the transport area 410 with theionizer 413.

[0235] The following describes the structure of the container 200 usedfor the method of manufacturing the semiconductor integrated circuitdevice that is the present embodiment 1.

[0236] The container 200 shown in FIG. 2 is a sealed type and comprisesa container body 210 (container section) and the cover 220 (containercover section). The container body 210 has four latch grooves 211 and aflange 212 provided around an opening 210 a of the container body 210.

[0237] The container body 210 has an opening portion 210 a formed byopening a first face at a front surface side thereof. The container body210 includes a substrate holding section 210 b which functions as ashelf for horizontally accommodating the semiconductor substrate 300.For example, the container body 210 can accommodate twenty-fivesemiconductor substrates 300.

[0238] On the other hand, the cover 220 maintains a sealed state bycoming in close contact with the container body 210 at a peripheralportion of the above-mentioned first surface.

[0239] The cover 220 has key grooves 221 (keyhole portion) at positionscorresponding to the rotary keys 121 of the opening/closing apparatus100. When the rotary keys 121 of the opening/closing apparatus 100 areinserted into the key grooves 221 and are rotated up to an angle of 90°,four latches 222 provided with the cover 220 project or withdraw fromthe cover 220 by means of a cam mechanism (not shown) in the cover 220.At this time, the latches 222 are positioned to correspond to the latchgrooves 211 of the container body 210. With the cover 220 inserted intothe container body 210, if the latches 222 is made to project from theperiphery of the cover 220, the cover 220 can be fixed to the containerbody 210.

[0240] The container 200 has a double structure comprising an externalshell portion and an inside portion. That is, the inside portion isprovided with substrate holding sections 210 b being in contact with thesemiconductor substrate 300, and is made by conductive materials so thatthe semiconductor substrate 300 is set to have a potential of 0 V. Theabove-mentioned external shell is made by nonconductive materials.

[0241] The container 200 is not necessarily limited to the doublestructure, and maybe a single structure that is integrally made byconductive materials as a whole. Although contact portions coming incontact with at least the semiconductor substrate 300 are preferablyformed by conductive materials, the entire thereof may be formed bynonconductive materials.

[0242] Moreover, the conductive materials are, for example, resinmaterials containing carbon particles or the like, and polycarbonate orthe like is used as the above-mentioned resin materials.

[0243] When the conductive materials are used, surface resistivity R (Ω)of the container 200 has an optimum range of 1×10⁶≦R≦1×10⁹, anappropriate range of 1×10⁵≦R≦1×10¹³, and an allowable range of1×10⁴≦R≦1×10¹⁴.

[0244] In the container 200, these conductive materials are portionsbeing in contact with the semiconductor substrate 300 which is a wafer.However, the entire container 200 may be formed by these conductivematerials.

[0245] Next, opening and closing operations of the container 200 will bedescribed, which is used in the method of manufacturing thesemiconductor integrated circuit device that is the present embodiment1.

[0246] First, described is an operation for opening the sealed typecontainer 200. The container 200 (first semiconductor-accommodatingcontainer) is placed on the stage 110. The slider 111 on the stage 110is then moved in parallel at a side of the semiconductor manufacturingapparatus 400. Each rotary key 121 (key section) on a connection surface120 a of the opener 120 for the opening/closing apparatus 100 isinserted into each key groove 221 (keyhole section) in an exposedsurface 220 a of the cover 220 for the container 200.

[0247] With this state, by rotating each rotary key 121 at 900 clockwiserelative to the container 200, each key groove 221 in the cover 220rotates and the cover 220 is fitted to the opener 120. At the same time,by cam mechanism (not shown) inside the cover 220, each latch 222 isaccommodated inside the cover 220.

[0248] Then, by horizontally moving the opener opening/closing mechanism130 in a side of the semiconductor manufacturing apparatus 400, thecover 220 of the container 200 is detached from the container body 210.Then, by the opener rising/falling mechanism 131 the opener 120 is madeto fall.

[0249] On the other hand, an operation for closing the container 200 isexecuted, contrary to the above-mentioned opening operation, by makingthe opener rising/falling mechanism 131 rise and by horizontally movingopener opening/closing mechanism 130 in a side of the stage 110, thecover 220 fitted to the opener 120 is connected to the container body210.

[0250] Thereafter, by rotating each rotary key 121 at 90°counterclockwise, each latch 222 of the cover 220 is accommodated ineach latch groove 211 and the cover 220 is fitted into the containerbody 210

[0251] Finally, the slider 111 is moved in parallel at an opposite sideof the semiconductor manufacturing apparatus 400 and a state is formedin which the container 200 is detached from the stage 110.

[0252] Next, by using FIGS. 1 to 6, a sequence for carrying in or outthe semiconductor substrate 300 to/from the semiconductor manufacturingapparatus 400 in the method of manufacturing the semiconductorintegrated circuit device that is the present embodiment 1 will bedescribed in accordance with a sequence flowchart shown in FIG. 6.

[0253] First, as shown at step S1 in FIG. 6, the first sealed typecontainer 200 accommodating a plurality of semiconductor substrates 300(semiconductor substrates 300 of (A) shown by FIG. 5) is set on the loadport 100 a of the semiconductor manufacturing apparatus 400.

[0254] Since contact portions being in contact with the semiconductorsubstrate 300 such as at least the substrate holding section 210 b orthe like in the container 200 are made by conductive materials, thesemiconductor substrate 300 accommodated in the container 200 isgrounded to the opening/closing apparatus 100 via the container 200.Therefore, the semiconductor substrate 300 in the container 200 on theload port 100 a has a potential of almost 0 V.

[0255] Namely, a plurality of semiconductor substrates 300 isaccommodated in the sealed type container 200 with the semiconductorsubstrates 300 grounded.

[0256] Then, the cover 220 of the container 200 is opened by the opener120 of the opener rising/falling mechanism 131 for the opening/closingapparatus 100 installed on the semiconductor manufacturing apparatus400.

[0257] Here, a local cleaning chamber 430 having the transport area 410has a surface 150 a (front surface portion) of a surface plate 150 forthe opening/closing apparatus 100. The surface 150 a comes in contactwith or closely faces the first face of the first sealed type container200. There is formed an opening portion 150 b (connection openingportion) in this surface 150 a.

[0258] The opener 120 is provided so as to cover the opening 150 a andhas the rotary keys 121 (key section) which connect to the key grooves221 under a projected state.

[0259] With each rotary key 121 (key section) of the opener 120 insertedinto each key groove 221 (keyhole section) of the cover 220 in the FOUP,an unlocking operation is executed. Thereafter, with the cover 220 heldby the opener, the opener 120 is introduced into the local cleaningchamber 430.

[0260] By keeping the cleanliness, the internal space of the container200 is linked to the local cleaning chamber 430 provided with thetransport area 410 for the semiconductor manufacturing apparatus 400(first wafer treatment apparatus) Thereafter, under a linking statedescribed above, the transport robot 411 carries the semiconductorsubstrate 300 accommodated in the container 200. The transport robot 411is a transport mechanism provided in the transport area 410 of the localcleaning chamber 430.

[0261] The robot hand 411 a (contact section) of the transport robot 411installed in the transport area 410 holds (seizes) the semiconductorsubstrate 300 and take it out from the container 200. After thesemiconductor substrate 300 is introduced in the transport area 410, thetransport robot 411 moves the semiconductor substrate 300 (semiconductorsubstrate 300 of (B) shown in FIG. 5) to the alignment section 415 (StepS2).

[0262] Since the container 200 in this embodiment is a frontopening/closing type FOUP, the cover 220 is vertically moved relative toan opening surface of the container 200 by the opener 120 and thereby isopened.

[0263] Moreover, since nonconductive resin coating is applied to contactportions between the robot hand 411 a of the transport robot 411 and thesemiconductor substrate 300, the semiconductor substrate 300 isungrounded while being held by the robot hand 411 a. Namely, thesemiconductor substrate 300 does not have a potential of 0 V while beingtransported by the transport robot 411.

[0264] However, in the semiconductor manufacturing apparatus 400 that isthe present embodiment 1, since the ionizer 413 is provided in thetransport area 410, static elimination of the ionizer 413 can preventthe semiconductor substrate 300 in the transport area 410 from beingcharged and the robot hand 411 a of the transport robot 411 too can bestatic-eliminated.

[0265] Thereafter, alignment (adjustment of direction and position) ofthe semiconductor substrate 300 is executed by the alignment section415. Static elimination can be executed by the ionizer 413 since thealignment section 415 is also linked to the transport area 410.

[0266] After the alignment, the transport robot 411 takes thesemiconductor substrate 300 from the alignment section 415. Thetransport robot 411 transports the semiconductor substrate 300 to theload lock chamber 421 (Step S3). The substrate supporting stands 421 bof the load lock chamber 421 as shown in FIG. 4 support thesemiconductor substrate 300 (semiconductor substrate 300 of (C) shown inFIG. 5).

[0267] Since nonconductive resin coating is applied to contact portionsbetween the semiconductor substrate 300 and the substrate supportingstands 421 b, the semiconductor substrate 300 does not have a potentialof 0 V in the load lock chamber 421, similarly to the case where it istransported by the above-mentioned transport robot 411. However, staticelimination is executed by the ionizer 413 because the load lock chamber421 is also linked to the transport area 410. At this time, it is alsopossible to static-eliminate the substrate supporting stands 421 b.

[0268] Accordingly, static elimination executed by the ionizer 413 canprevent the semiconductor substrate 300 even in the load lock chamber421 from being charged.

[0269] Thereafter, the gate valve 421 a of the load lock chamber 421 isclosed to decompress the load lock chamber 421. Pressure of the loadlock chamber 421 is equalized to that of the treatment chamber 423inside the treatment section 420 (first wafer treatment section).

[0270] After the load lock chamber 421 is decompressed, the gate valve421 a in a side of the treatment chamber 423 is opened. A robot (notshown) provided in the treatment chamber 423 transports thesemiconductor substrate 300 to the treatment chamber 423 (Step S4).

[0271] Then, in the treatment chamber 423, a desired process treatment(first treatment) is executed at the semiconductor substrate 300(semiconductor substrate 300 of (D) shown in FIG. 5).

[0272] After the process treatment, the above-mentioned robot in thetreatment chamber 423 transports the semiconductor substrate 300 intothe decompressed unload lock chamber 422 (Step S5).

[0273] Similarly to the case of the load lock chamber 421, thesemiconductor substrate 300 (semiconductor substrate 300 of (E) shown inFIG. 5) does not have a potential of 0 V in the unload lock chamber 42.Therefore, static elimination can executed by the ionizer 413 since theunload lock chamber 422 and the transport area 410 are linked to eachother.

[0274] Thereafter, the gate valve 422 a of the unload lock chamber 422is closed to pressurize the unload lock chamber 422 up to normalpressure. After the pressurization, the gate valve 422 a in a side ofthe transport area 410 is opened. The transport robot 411 in thetransport area 410 transports the process-treated semiconductorsubstrate 300 from the unload lock chamber 422 to the transport area 410(Step S6).

[0275] Further, this semiconductor substrate 300 is transported into thecontainer 200 (container 200 located at a lower side in FIG. 5) on theload port 100 a. In this manner, the process-treated semiconductorsubstrates 300 are sequentially returned to the original container 200(Step S7).

[0276] The ionizer 413 in the transport area 410 can static-eliminatethe semiconductor substrate 300 in which process treatment has beenperformed by the robot hand 411 a during transportation, or thesemiconductor substrate 300 (the semiconductor substrate 300 of (A)shown in FIG. 5) which is accommodated in the container 200.

[0277] Namely, with the semiconductor substrate 300 grounded, thesemiconductor substrate 300 is accommodated in the container 200.

[0278] After the process treatment is completed for all semiconductorsubstrates 300 accommodated in the container 200 shown in the lower sideof FIG. 5 and these semiconductor substrates are accommodated in theoriginal container 200, the opener opening/closing mechanism 130 shownin FIG. 1B closes the cover 220 of the container 200, and releases alinking state between the container 200 (firstsemiconductor-accommodating container) and the local cleaning chamber430.

[0279] This returns the container 200 to the sealed state.

[0280] This container 200 is transported to a predetermined location ofthe semiconductor manufacturing apparatus 400 for the next step (StepS8).

[0281] The process treatment of the semiconductor substrates 300 in thetreatment section 420 of the semiconductor manufacturing apparatus 400is performed by a single wafer treatment.

[0282] Further, a transporting sequence of the semiconductor substrate300 from step S1 to step S8 is a sequence for one semiconductorsubstrate 300 predetermined. However, for example, while theabove-mentioned one semiconductor substrate 300 predetermined isprocess-treated in the treatment section 420 (semiconductor substrate300 of (D) shown in FIG. 5), the other semiconductor substrates 300before the process treatment are subsequently waiting in the load lockchamber 421 (semiconductor substrate 300 of (C) shown in FIG. 5), thealignment section 415 (semiconductor substrate 300 of (B) shown in FIG.5), and the container 200 (semiconductor substrate 300 of (A) shown inFIG. 5).

[0283] Next, modifications of the present embodiments shown in FIGS. 7and 8 will be described below.

[0284]FIG. 7 shows a modification of the semiconductor manufacturingapparatus 400, and the modification has such a structure that thetransport area 410 and the treatment section 420 are directly linkedwithout linking the load lock chamber 421 or the unload lock chamber 422therebetween. Even in this case, it is possible to static-eliminate thesemiconductor substrate 300 (see FIG. 2) before and after the processtreatment by installing the ionizer 413 in the transport area 410.

[0285] The semiconductor manufacturing apparatus 400 shown in FIG. 7 isprovided with a chemical filter 414 on the fan filter unit 412 of thetransport area 410. By this, chemical contamination of the semiconductorsubstrate 300 can be avoided.

[0286]FIG. 8 illustrates an operation of the opening/closing apparatus100 when a modified semiconductor-accommodating container 500 (hereafterreferred to as a container 500) is used.

[0287] That is, the container 500 is not a bottom opening/closing typebut a front opening/closing type. This container comprises a containerbody 510, a cover 520, and a substrate holding section 510 b. When thisis set on the cover 520 of the opening/closing apparatus 100, the cover520 is set downward.

[0288] Therefore, when the opener opening/closing mechanism 130 of theopening/closing apparatus 100 shown in FIG. 1 opens or closes thecontainer 500, the opener rising/falling mechanism 131 makes an elevator131 a shown in FIG. 8 lower or raise, and makes the substrate holdingsection 510 b exposed from the container 500. Thereby, the semiconductorsubstrates 300 is carried in or out through the opening portion 510 a ofthe substrate holding section 510 b.

[0289] Accordingly, even the bottom opening/closing type container 500can be applied similarly to the front opening/closing type container200.

[0290] According to the method of manufacturing the semiconductorintegrated circuit device that is the present embodiment 1, thesemiconductor-accommodating container may be a front opening/closingtype or a bottom opening/closing type in the case of a sealed type.

[0291] The method of manufacturing the semiconductor integrated circuitdevice that is the present embodiment 1 will have operations and effectsas follows.

[0292] That is, the ionizer 413 static-eliminates the semiconductorsubstrate 300 process-treated by the treatment section 420 in thetransport area 410 between the load port 100 a of the semiconductormanufacturing apparatus 400 and the treatment section 420. Beingaccommodated in the container 200 on the load port 100 a can eliminateselectric charges from the semiconductor substrate 300 charged.

[0293] Therefore, it is possible to decrease amounts of foreignmaterials adhering to the semiconductor substrate 300 and to improve ayield thereof.

[0294] Further, it is also possible to static-eliminate contact portions(regions) being in contact with the semiconductor substrate 300, forexample, the robot hand 411 a, the substrate supporting stands 421 b ofthe load lock chamber 421, or the like. Consequently, it is possible toeliminate potential difference between the semiconductor substrate 300and the semiconductor substrate contact portions.

[0295] Therefore, it is possible to reduce disadvantages of handlingerrors caused by the semiconductor substrate 300 charged, andtransporting errors of semiconductor substrate 300, and the like.

[0296] As a result, it is possible to improve reliability fortransporting the semiconductor substrate 300 and an operating ratio ofthe semiconductor manufacturing apparatus 400.

[0297] Since electric charge can be eliminated from the semiconductorsubstrate 300 charged, it is possible to decrease a damage to thesemiconductor substrate 300 due to a discharge and consequently improvea yield of the semiconductor substrate 300.

[0298] The following describes a speed for opening and closing the cover220 of the container 200.

[0299] When the semiconductor substrate 300 (semiconductor wafer) istransported from the container 200 to the semiconductor manufacturingapparatus 400 or from the semiconductor manufacturing apparatus 400 tothe container 200, the semiconductor manufacturing apparatus 400 and thecontainer 200 are connected via the opening/closing apparatus 100.Therefore, by opening and closing the cover 220 of the container 200, aclean area inside the semiconductor manufacturing apparatus 400 and aclean area inside the container 200 are directly connected to eachother.

[0300] At this time, internal pressure of the semiconductormanufacturing apparatus 400 is slightly set to be positive pressure incomparison to the outside world. Except for moments when the container200 is opened and closed, there is a little possibility that foreignmaterials enter a gap between a flange 211 of the container 200 and thesurface plate 150 of the opening/closing apparatus 100.

[0301] However, if the opener opening/closing mechanism 130 of theopening/closing apparatus 100 has high speed of the operation thereof,the inside of the container 200 becomes negative pressure at momentswhen the cover 220 is pulled out of the container body 210.Consequently, foreign materials enter the inside of the container 200through a gap between the flange 211 of the container 200 and thesurface plate 150 of the opening/closing apparatus 100 and adhering tothe semiconductor substrate 300.

[0302] The opening/closing speed of the cover 220 is disclosed in PCTapplication number PCT/JP00/05012 (international filing date Jul. 27,2000) by the inventors in detail.

[0303] (Embodiment 2)

[0304]FIG. 9 is a partial plan view showing an example of a step betweena connection surface of an opener and a surface of a surface plate in asubstrate accommodating container opening/closing apparatus used by amethod of manufacturing a semiconductor integrated circuit device thatis embodiment 2 of the present invention. FIG. 10 is a partially planview showing an example of amounts of overlap between a connectionsurface of an opener and an exposed surface of asemiconductor-accommodating container in a substrate accommodatingcontainer opening/closing apparatus that is the embodiment 2 of thepresent invention. FIG. 11 is a partial side view showing an example ofholding the opener of the semiconductor manufacturing apparatus shown inFIG. 10.

[0305] The method of manufacturing a semiconductor integrated circuitdevice that is the present embodiment 2 uses the container 200 shown inFIG. 2, that is a FOUP, which is a sealed type described in theembodiment 1 and a front-opening/closing type, and carries in or out thesemiconductor substrate 300 having the diameter of 300 mm to or from thesemiconductor manufacturing apparatus 400. At this time, said methodexplains a positional relation between the cover 220 of the container200 and the connection surface 120 a of the opener 120 for theopening/closing apparatus 100 installed in the semiconductormanufacturing apparatus 400.

[0306] With respect to the container 200, a container length L shown inFIG. 9 (the container length L is a length between a facial referencesurface 230 of the container 200 and an end portion of container body210 in a front surface side of the container, or between a facialreference surface 230 and an exposed surface 220 a of the cover 220)provides that if the container length is (y33), y33=165.5±0.5 mm underthe SEMI standards E47.1 and E62. Namely, the container length L is setto be L=165.5 mm±0.5 mm.

[0307] Further, the same standards provides that a side of the load port100 a is also set to be y33=165.5±0.5 mm.

[0308] About the step D between the connection surface 120 a of theopener 120 for the opening/closing apparatus 100 and the surface 150 aof the surface plate 150, the SEMI standard E62 provides that tolerance(y34) thereof is set to be y34=±0.25 mm.

[0309] In the present embodiment 2, the step D between the connectionsurface 120 a of the opener 120 and the surface 150 a of the surfaceplate 150, that is, projecting amounts from the surface 150 a of thesurface plate 150 of the connection surface 120 a of the opener 120 isset to be longer than 0.25 mm. Namely, the connection surface 120 a ofthe opener 120 is projected from the surface 150 a of the surface plate150 over 0.25 mm.

[0310] Moreover, the connection surface 120 a of the opener 120 isprojected from the surface 150 a of the surface plate 150 over 0.3 mm(namely, the above-mentioned projecting amounts are set to be longerthan 0.3 mm).

[0311] The above-mentioned projecting amounts depend on a virtual stopposition (based on servo control, etc.) of the opener 120 in the case ofno FOUP (container 200).

[0312] Optimally, the projecting amounts are 1.0 mm. An appropriaterange is 0.7 mm<projecting amounts. A preferable range is 0<projectingamounts<10 mm.

[0313] By setting the projecting amounts to the optimum value of 1.0 mm,it is possible to provide the opening/closing apparatus 100 which isreliably opening/closing possible even if the container length L has theminimum value of 165 mm.

[0314] About projecting amounts from the surface 150 a of the surfaceplate 150 of the connection surface 120 a of the opener 120, when thecontainer 200 is set on the load port 100 a, the opener 120 supported byan opener supporting portion 130 a cantilevered as shown in FIG. 11retreats inside the apparatus, by moving in parallel at a side of thesemiconductor manufacturing apparatus 400.

[0315] As shown in FIG. 11, the opener 120 is supported by the openersupport 130 a (cantilever beam). When the container 200 is positioned tothe load port 100 a, the opener 120 supported by an opener supportingportion 130 a cantilevered as shown in FIG. 11 retreats inside theapparatus, by moving in parallel at a side of the semiconductormanufacturing apparatus 400. The projecting amounts may be preferablywithin a range capable of horizontally operating the opener 120.

[0316] In the method of manufacturing the semiconductor integratedcircuit device that is the present embodiment 2, under the conditionthat such the step D (above-mentioned projecting amounts) is set, thesemiconductor substrate 300 is carried in or out.

[0317] First, the full state container 200 (firstsemiconductor-accommodating container) accommodating a plurality ofsemiconductor substrates 300 therein is located on the stage 110 of theopening/closing apparatus 100 shown in FIG. 1.

[0318] At this time, a front surface which is a first surface of thecontainer 200 is come in contact with or closely faced at the surface150 a of the surface plate 150 of the opening/closing apparatus 100 ofthe local cleaning chamber 430 such that the rotary keys 121 of theopener 120 are inserted into the key grooves 221 of the cover 220 of thecontainer 200.

[0319] Thereafter, the connection surface 120 a of the opener 120 is putinto contact with the exposed surface 220 a of the cover 220 to hold(seize) the cover 220 by the opener 120.

[0320] At this time, the connection surface 120 a (front portion) of theopener 120 is maintained so as to project over 0.25 mm from the surface150 a of the surface plate 150 in the case where the container 200 isnot provided.

[0321] Consequently, since the connection surface 120 a of the opener120 projects from the surface 150 a of the surface plate 150, theconnection surface 120 a of the opener 120 is closely and certainlycontact with the exposed surface 220 a of the cover 220 of the container200.

[0322] Thereafter, the opener 120 vertically moves the cover 220relative to the opening surface of the container 200 to open the cover220. This connects the opening 210 a of the container 200 and theopening 150 b of the surface plate 150 for the opening/closing apparatus100 to each other.

[0323] Subsequently, the semiconductor substrate 300 is carried in orout from the container between the container 200 and the semiconductormanufacturing apparatus 400 via the opening 210 a of the container 200and the opening 150 b of the opening/closing apparatus 100.

[0324] An overlap amount T in FIG. 10 is set to 0<T<1.25 mm in order toensure a contact between the opener 120 and the cover 220 when the cover220 of the container 200 is opened and closed.

[0325] The overlap amount T corresponds to an overlap between thecontainer length L of the container 200 and the projection amount (StepD) from the surface 150 a of the surface plate 150 for the opener 120.

[0326] According to the above-mentioned SEMI standard, the containerlength L is assumed to be y33 and is specified as y33=165.5±0.5 mm. Onthe side of the load port 100 a, a distance P from the facial referencesurface 230 during docking to the surface 150 a of the surface plate 150is assumed to be y33 and is specified as y33=165.5±0.5 mm. There is thestep D between the connection surface 120 a of the opener 120 for theopening/closing apparatus 100 and the surface 150 a of the surface plate150. This step's tolerance is assumed to be y34 and is specified asy34=±0.25 mm in the above-mentioned SEMI standard.

[0327] The maximum overlap amount T is a sum of maximum tolerances forthe container length L, the distance P, and the step D, and results inT=1.25 mm. The maximum overlap amount T is a sum of minimum tolerancesfor these values and results in T=−1.25 mm. This means generation of a1.25 mm gap between the opener 120 and the cover 220.

[0328] The method of manufacturing the semiconductor integrated circuitdevice according to embodiment 2 requires contact between the opener 120and the cover 220. The overlap amount T is at least T>0. An allowablerange of the overlap amount T is 0<T≦1.25 mm.

[0329] Accordingly, the overlap amount T (mm) needs to be T>0 for allcontainers 200 operating on the semiconductor manufacturing line. Adesirable range is 0<T≦1.25 for all containers 200 operating on thesemiconductor manufacturing line.

[0330] Actually, it is difficult for all containers 200 operating on thesemiconductor manufacturing line to satisfy the condition of T>0.Accordingly, it is desirable to keep a percentage of incomplete contactbetween the connection surface 120 a of the opener 120 and the exposedsurface 220 a of the cover 220 to be 1% or less for all containers 200operating on the semiconductor manufacturing line.

[0331] However, a percentage of incomplete contact between the opener120 and the cover 220 may exceed 1% of all containers 200 operating onthe semiconductor manufacturing line.

[0332] The method of manufacturing the semiconductor integrated circuitdevice according to embodiment 2 provides the following advantageouseffects.

[0333] Namely, the connection surface 120 a of the opener 120 is made toproject from the surface 150 a of the surface plate 150 for theopening/closing apparatus 100 installed on the semiconductormanufacturing apparatus 400. Thus, it is possible to ensure contactbetween the connection surface 120 a of the opener 120 and the cover 220of the container 200 when the cover 220 of the container 200 is openedand closed.

[0334] Accordingly, it is possible to decrease damages to the container200, prevent dust generation, and extend an endurance period of thecontainer 200.

[0335] Since the connection surface 120 a of the opener 120 can contactwith the cover 220 of the container 200, it is possible to reliably openand close the cover 220, preventing a foreign materials from adhering tothe semiconductor substrate 300.

[0336] The use of the ionizer 413 according to embodiment 1 can improvethe reliability for carrying the semiconductor substrate 300 and openingand closing the cover 220 of the container 200. Hence, it is possible toprevent a decrease in the operating ratio of the semiconductormanufacturing apparatus 400 on the entire semiconductor manufacturingline.

[0337] While there have been described the present invention by theinventors based on specific preferred embodiments 1 and 2, it is to bedistinctly understood that the present invention is not limited toembodiments 1 and 2. It is further understood by those skilled in theart that various changes and modifications may be made in the presentinvention without departing from the spirit and scope thereof.

[0338] The semiconductor manufacturing apparatus 400 described inembodiments 1 and 2 is not limited to pre-processes. The apparatus maybe an inspection apparatus or a wafer sorter which does not directlyconduct manufacture on the semiconductor substrate 300. Also in thiscase, it is possible to provide same effects as for embodiments 1 and 2.

[0339] The following summarizes advantageous effects obtained by majoraspects of the present invention disclosed in the application concerned.

[0340] (1) A yield of semiconductor substrates can be improved.

[0341] (2) An operating ratio of the semiconductor manufacturingapparatus can be improved.

What is claimed is:
 1. A method of manufacturing a semiconductorintegrated circuit device, comprising the steps of: (a) linking aninternal space of a first sealed type semiconductor-accommodatingcontainer which accommodates and is filled with a plurality of wafersgrounded, to a local cleaning chamber of a first wafer treatmentapparatus with cleanliness kept; (b) transporting at least of one ofsaid plurality of wafers accommodated in said firstsemiconductor-accommodating container under said linking state by meansof a transport mechanism provided in said local cleaning chamber, andthereby accommodating the at least one in a wafer treatment section ofsaid first wafer treatment apparatus; (c) executing a first treatmentrelative to said wafer accommodated in said first wafer treatmentsection; (d) transporting said processed wafer by said transportmechanism after said step (c), and thereby accommodating said processedwafer grounded in said first semiconductor-accommodating container; (e)static-eliminating said processed wafer after said step (c) and beforethe step (d), or during the step (d); and (f) releasing the linkingstate between said first semiconductor-accommodating container and saidlocal cleaning chamber after said step (d), and thereby returning saidfirst semiconductor-accommodating container to a full state.
 2. Themethod of manufacturing a semiconductor integrated circuit deviceaccording to claim 1, wherein said wafer has a diameter of 280 mm ormore.
 3. The method of manufacturing a semiconductor integrated circuitdevice according to claim 1, wherein a contact portion of said wafer insaid first semiconductor-accommodating container has a surfaceresistivity R of 1×10⁴≦R(Ω)≦1×10¹⁴.
 4. The method of manufacturing asemiconductor integrated circuit device according to claim 1, wherein acontact portion of said wafer in said first semiconductor-accommodatingcontainer has a surface resistivity R of 1×10⁵≦R(Ω)≦1×10¹³.
 5. Themethod of manufacturing a semiconductor integrated circuit deviceaccording to claim 1, wherein a contact portion of said wafer in saidfirst semiconductor-accommodating container has a surface resistivity Rof 1×10⁶≦R(Ω)≦1×10⁹.
 6. The method of manufacturing a semiconductorintegrated circuit device according to claim 1, wherein said staticelimination is executed by an ionizer.
 7. The method of manufacturing asemiconductor integrated circuit device according to claim 1, wherein acontact portion being in contact with said wafer of said transportmechanism is static-eliminated during said static elimination.
 8. Amethod o manufacturing a semiconductor integrated circuit device,comprising the steps of: (a) linking an internal space of a first sealedtype semiconductor-accommodating container which accommodates and isfilled with a plurality of wafers, to a local cleaning chamber for afirst wafer treatment apparatus with cleanliness kept; (b) transportingat least of one of said plurality of wafers accommodated in said firstsemiconductor-accommodating container under said linking state by meansof a transport mechanism provided in said local cleaning chamber, andthereby accommodating the at least one in a wafer treatment section ofsaid first wafer treatment apparatus; (c) executing a first treatmentrelative to said wafer accommodated in said first wafer treatmentsection; (d) transporting said processed wafer by said transportmechanism after said step (c), and thereby accommodating said processedwafer in said first semiconductor-accommodating container; and (e)releasing the linking state between said firstsemiconductor-accommodating container and said local cleaning chamberafter said step (d), and thereby returning said firstsemiconductor-accommodating container to a full state, wherein saidfirst sealed type semiconductor-accommodating container comprises: (i) acontainer body on which a first surface is opened; (ii) a containercover for maintaining a full state by closely being in contact with saidcontainer body at a peripheral portion of said first surface in a fullstate; and (iii) a keyhole section provided in said container cover, andwherein said local cleaning chamber comprises: (I) a front surfaceportion being in contact with or closely facing said first surface ofsaid first sealed type semiconductor-accommodating container during alinking state; (II) a connection opening portion provided on said frontsurface portion; and (III) an opener provided so as to cover saidconnection opening portion and having a key portion connected to saidkeyhole portion projected during the link, and wherein said step (a)further includes the sub-steps of: (p) contacting to or closely facingsaid first surface of said sealed type semiconductor-accommodatingcontainer which accommodates and is filled with said plurality ofwafers, and said front surface portion of said local cleaning chamber,such that said key portion can be inserted into said keyhole; (q)maintaining a front surface of said opener so as to projecting over 0.25mm from said front surface in the case where said first sealed typesemiconductor-accommodating container is not provided, before and after,or during said step (p); and (r) executing an unlocking operation withsaid key portion inserted into said keyhole, and thereafter withdrawingsaid opener into said local cleaning chamber, and thereby linking saidinternal space of said first sealed semiconductor-accommodatingcontainer to said local cleaning chamber of said first wafer treatmentapparatus.
 9. The method of manufacturing a semiconductor integratedcircuit device according to claim 8, wherein said wafer has a diameterof 280 mm or more.
 10. The method of manufacturing a semiconductorintegrated circuit device according to claim 8, wherein said projectinglength of said opener is over 0.3 mm.
 11. The method of manufacturing asemiconductor integrated circuit device according to claim 8, whereinsaid projecting length of said opener is over 0.7 mm.
 12. The method ofmanufacturing a semiconductor integrated circuit device according toclaim 8, wherein said projecting length of said opener is over 1.0 mm.13. The method of manufacturing a semiconductor integrated circuitdevice according to claim 8, wherein said step (q) is executed beforesaid step (p).
 14. The method of manufacturing a semiconductorintegrated circuit device according to claim 8, wherein a non-close ratebetween a front surface portion of said opener and said container coveris 1% or less among all semiconductor-accommodating containers operatingon a semiconductor production line, when said firstsemiconductor-accommodating container and said local cleaning chamberare linked to each other.